4-164 up to 6 ghz medium power silicon bipolar transistor technical data features ? high output power: 21.0 dbm typical p 1 db at 2.0 ghz 20.5 dbm typical p 1 db at 4.0 ghz ? high gain at 1 db compression: 15.0 db typical g 1 db at 2.0 ghz 10.0 db typical g 1 db at 4.0 ghz ? low noise figure: 1.9 db typical nf o at 2.0 ghz ? high gain-bandwidth product: 8.0 ghz typical f t ? hermetic gold-ceramic microstrip package at-42070 70 mil package description hewlett-packards at-42070 is a general purpose npn bipolar transistor that offers excellent high frequency performance. the at-42070 is housed in a hermetic, high reliability gold-ceramic 70 mil microstrip package. the 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. the 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. this device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the vhf, uhf, and microwave frequencies. an optimum noise match near 50 w up to 1 ghz, makes this device easy to use as a low noise amplifier. the at-42070 bipolar transistor is fabricated using hewlett-packards 10 ghz f t self-aligned-transistor (sat) process. the die is nitride passivated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this device. 5965-8912e
4-165 at-42070 absolute maximum ratings absolute symbol parameter units maximum [1] v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 20 v ceo collector-emitter voltage v 12 i c collector current ma 80 p t power dissipation [2,3] mw 600 t j junction temperature c 200 t stg storage temperature c -65 to 200 thermal resistance [2,4] : q jc = 150 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 6.7 mw/ c for t c > 110 c. 4. the small spot size of this tech- nique results in a higher, though more accurate determination of q jc than do alternate methods. see measurements section thermal resistance for more information. electrical specifications, t a = 25 c symbol parameters and test conditions [1] units min. typ. max. |s 21e | 2 insertion power gain; v ce = 8 v, i c = 35 ma f = 2.0 ghz db 10.5 11.5 f = 4.0 ghz 5.5 p 1 db power output @ 1 db gain compression f = 2.0 ghz dbm 21.0 v ce = 8 v, i c = 35 ma f= 4.0 ghz 20.5 g 1 db 1 db compressed gain; v ce = 8 v, i c = 35 ma f = 2.0 ghz db 15.0 f = 4.0 ghz 10.0 nf o optimum noise figure: v ce = 8 v, i c = 10 ma f = 2.0 ghz db 1.9 f = 4.0 ghz 3.0 g a gain @ nf o ; v ce = 8 v, i c = 10 ma f = 2.0 ghz db 14.0 f = 4.0 ghz 10.5 f t gain bandwidth product: v ce = 8 v, i c = 35 ma ghz 8.0 h fe forward current transfer ratio; v ce = 8 v, i c = 35 ma 30 150 270 i cbo collector cutoff current; v cb = 8 v m a 0.2 i ebo emitter cutoff current; v eb = 1 v m a 2.0 c cb collector base capacitance [1] : v cb = 8 v, f = 1 mhz pf 0.28 note: 1. for this test, the emitter is grounded.
4-166 at-42070 typical performance, t a = 25 c frequency (ghz) figure 4. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ce = 8 v, i c = 35 ma. gain (db) 0.1 0.5 0.3 1.0 3.0 6.0 i c (ma) figure 2. output power and 1 db compressed gain vs. collector current and frequency. v ce = 8 v. 24 20 16 12 8 4 g 1 db (db) p 1 db (dbm) 0 1020 304050 p 1db g 1db 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz 40 35 30 25 20 15 10 5 0 msg mag |s 21e | 2 i c (ma) figure 1. insertion power gain vs. collector current and frequency. v ce = 8 v. 20 16 12 8 4 0 |s 21e | 2 gain (db) 0 1020 304050 1.0 ghz 2.0 ghz 4.0 ghz i c (ma) figure 3. output power and 1 db compressed gain vs. collector current and voltage. f = 2.0 ghz. 10 v 4 v 6 v 4 v 10 v 6 v 24 20 16 12 16 14 12 10 g 1 db (db) p 1 db (dbm) 0 1020 304050 p 1db g 1db frequency (ghz) figure 5. noise figure and associated gain vs. frequency. v ce = 8 v, i c = 10ma. gain (db) 24 21 18 15 12 9 6 3 0 4 3 2 1 0 nf o (db) 0.5 2.0 1.0 3.0 4.0 5.0 g a nf o
4-167 at-42070 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 10 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .70 -49 28.5 26.56 154 -36.0 .016 77 .91 -18 0.5 .69 -137 21.5 11.85 105 -29.6 .033 34 .50 -41 1.0 .69 -165 16.0 6.34 85 -27.2 .044 29 .40 -44 1.5 .68 -179 12.7 4.33 72 -27.4 .043 37 .38 -48 2.0 .69 169 10.3 3.26 62 -25.6 .052 42 .37 -54 2.5 .69 164 8.5 2.64 56 -25.4 .054 46 .37 -55 3.0 .70 157 6.9 2.22 48 -23.8 .065 52 .39 -63 3.5 .70 151 5.6 1.91 39 -22.4 .076 51 .41 -71 4.0 .69 144 4.5 1.68 30 -21.4 .085 55 .43 -77 4.5 .68 137 3.5 1.50 22 -20.4 .096 49 .46 -83 5.0 .68 128 2.7 1.37 14 -19.4 .107 50 .48 -87 5.5 .68 117 2.0 1.26 5 -18.3 .121 45 .48 -91 6.0 .70 107 1.2 1.15 -3 -17.6 .132 44 .48 -98 at-42070 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 35 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .52 -95 33.4 46.52 139 -40.0 .010 50 .77 -29 0.5 .66 -163 23.1 14.33 95 -34.4 .019 46 .34 -42 1.0 .67 179 17.3 7.36 80 -29.6 .033 51 .28 -41 1.5 .67 169 13.9 4.97 69 -28.0 .040 59 .27 -44 2.0 .68 160 11.4 3.74 60 -27.3 .053 59 .27 -51 2.5 .69 157 9.6 3.04 55 -23.8 .065 65 .28 -53 3.0 .69 151 8.1 2.55 47 -22.8 .072 65 .28 -62 3.5 .69 145 6.8 2.20 39 -21.4 .086 59 .30 -72 4.0 .68 139 5.7 1.93 20 -20.2 .097 60 .33 -80 4.5 .67 132 4.7 1.74 22 -19.3 .109 54 .36 -85 5.0 .67 123 4.0 1.59 13 -18.0 .126 50 .38 -90 5.5 .67 113 3.2 1.46 5 -17.2 .138 46 .39 -94 6.0 .69 103 2.5 1.34 -4 -16.4 .152 40 .38 -102 a model for this device is available in the device models section. at-42070 noise parameters: v ce = 8 v, i c = 10 ma freq. nf o g opt ghz db mag ang r n /50 0.1 1.0 .05 15 0.13 0.5 1.1 .06 75 0.13 1.0 1.5 .10 126 0.12 2.0 1.9 .23 172 0.11 4.0 3.0 .45 -145 0.17
4-168 70 mil package dimensions 1 3 4 2 emitter emitter collector base .020 .508 .070 1.70 .495 .030 12.57 .76 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .040 1.02 .035 .89 .004 .002 .10 .05
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